Theoretical analysis and numerical calculations are presented for ultrahighspeed 50 ghz travelingwave electroabsorption modulators tweams, including effects of velocity mismatch, impedance mismatch, and microwave attenuation. The eam is a pin waveguide modulator fabricated on siinp. Most electroabsorption modulators are made in the form of a waveguide with electrodes for applying an electric field in a direction perpendicular to the modulated light beam. High power peripheral coupled waveguide electroabsorption. We carefully choose the quantumwell structures so that the structures based on different material systems have similar bandoffset energies and excitionpeak wavelengths. They are promising devices for external signal modulation in highbandwidth optical communication systems.
The index ellipsoid is a construct with geometric characteristics representing the phase. These devices are also very well suited for monolithic integration with semiconduc. If you do not see its contents the file may be temporarily unavailable at the journal website or you do not have a pdf plugin installed and enabled in your browser. Buyers guide products electroabsorption modulators. The research will develop software for designing electroabsorption modulator typed waveguide with matlab program. For achieving a high extinction ratio, one usually exploits the quantumconfined stark effect in a quantum well structure. The modulator parameter extractor is a software tool that enables parameter fitting of measurements from mqw electroabsorption modulators 1 with one or two dimensional functions, using a polynomial form. Ultrahighspeed travelingwave electroabsorption modulator. Leijtens 1 1 cobra research institute, eindhoven university of technology, p. Oct 04, 20 for the love of physics walter lewin may 16, 2011 duration. A dissertation submitted in partial satisfaction of the requirements for the. Read application of electroabsorption modulators for highspeed transmission systems, journal of optical and fiber communications reports on deepdyve, the largest online rental service for scholarly research with thousands of academic publications available at your fingertips. Pdf we present an electroabsorption modulator based on the enhanced electrooptic effect of an asymmetric coupled triple quantum well actqw to. High speed electroabsorption modulators in generic integration.
In the 1980s, large slms were placed on overhead projectors to project computer monitor contents to the screen. A low power 2x28 gbs electroabsorption modulator driver array with onchip duobinary encoding renato vaernewyck y, xin yin, jochen verbrugghe, guy torfs y, xingzhi qiu, efstratios kehayasyy, nonmembers, and johan bauwelinckya, member summary an integrated 2x28 gbs dualchannel duobinary driver ic is presented. Laser diodes integrated with electroabsorption modulators. Surfacenormal multiple quantum well electroabsorption. An electroabsorption modulator eam is a semiconductor device which can be used for modulating the intensity of a laser beam via an electric voltage. Dfb laser integrated electroabsorption modulators 5 as shown in fig. Balanced electroabsorption modulator for highlinearity, low. Travelingwave electroabsorption modulators eams in inpbased materials are attractive devices for optical. Electroabsorption modulators are attractive for applications requiring high speed modulation, low drive voltage, high extinction ratio, and integrability. High speed operation up to 52gbits is also presented. Electroabsorption modulator performance predicted from. The two most common modulators are lithium niobate machzehnder and electroabsorption modulators. The travelingwave type eadfb lasers tweadfb lasers which have the 3db bandwidth of over 50 ghz were reported 4, 5.
Oclcs webjunction has pulled together information and resources to assist library staff as they consider how to handle coronavirus. A spatial light modulator slm is an object that imposes some form of spatially varying modulation on a beam of light. However, the tweadfb laser is large in size and has a complex structure. According to the convention of the lca where any port can be an input or an output, these values are directional. Electroabsorption modulators based on bulk gan films and ganalgan multiple quantum wells chenkai kao, anirban bhattacharyya, christos thomidis, roberto paiella, and theodore d. Electroabsorption study of indexdefined semiconducting. In this paper, a travelling wave electroabsorption modulators tweams based on asymmetric intrastepbarrier coupled double strained quantum wells aicdsqw active layer is designed and analyzed at 1. This paper presents new experimental data from a lateral pn junction silicon machzehnder optical modulator. As the channel bit rate distance product increases, external modulation of the laser light. Recent developments and applications in electroabsorption.
Modeling of machzehnder and electroabsorption modulator. Quantumconfined stark effect analysis of gesnsigesn. Where to buy electroabsorption modulators, eam, telecom. Gesige asymmetric fabryperot quantum well electroabsorption modulators elizabeth h.
Due to weak lightmatter interactions, it is always a challenge to develop a modulator with a nanometer scale footprint, low switching energy, low insertion loss and large modulation depth. These results may be used to achieve optical modulators with improved performance characteristics. Travelingwave electroabsorption modulators by shengzhong zhang the transmission bit rates in backbone telecommunication optical fibers are increasing rapidly, motivated by the explosive growth of internet traffic. High speed electroabsorption modulator in the generic. Oct 26, 2005 we report on the design, fabrication and characterization of 1550 nm electroabsorption modulators based on ingaasinalas coupled quantum wells grown on inp substrate by mbe. The majority of the most successful optical modulators in silicon demonstrated in recent years operate via the plasma dispersion effect and are more specifically based upon free carrier depletion in a silicon rib waveguide. Introduction electroabsorption modulators eam are key compo nents in modern. Ge and gesi electroabsorption modulators request pdf. Simulation of traveling wave electroabsorption modulators for phase modulation.
Other readers will always be interested in your opinion of the books youve read. Mason et al 40 gbs tandem electroabsorption modulator 29 fig. The device is designed for generation of high spectral efficiency optical modulation formats. High speed lightwave component analysis application note. Unconventional electroabsorption in monolayer mos2. Semiconductor electroabsorption modulator eam has found its way in fiberoptic communications thanks to its small size, good modulation efficiency, and promising integration with other semiconductor optoelectronic devices. Analysis of multiquantum well electroabsorption modulators. Electroabsorption modulators 271 as a general point of reference the absorption coefficient for ingaas at 1550 nm is approximately 6000 cm for a quantum well ea modulator under a strong electric field the change in the material absorption can be as high as 4500 cm thus for a 100 lim long modulator with a confinement factor of 0. Its principle of operation is based on the franzkeldysh effect 1, 2, i. The autocorre lation trace reveals a slightly narrower pulse with a deconvolved 5. Ingangan quantum electroabsorption modulators with record.
Whether youve loved the book or not, if you give your honest and detailed thoughts then people will find new books that are right for them. We report waveguideintegrated ge electroabsorption modulators operating at 1615nm wavelength with 3db bandwidth beyond 50ghz and a capacitance of 10ff. Next, qcse of gesnsigesn qws is analyzed and the qw design for electroabsorption modulators to obtain large extinction ratio in midinfrared region is presented. To reduce the modemismatch between fiber and waveguide, we employ a large optical cavity structure. We consider a plurality of material modulation classes to include twolevel absorbers such as quantum dots, free carrier accumulation or depletion such as ito or. Results of single channel and dwdm fiber transmission experiments are presented.
Analysis of multiquantum well electroabsorption modulators joachim piprek, yijen chiu, and john e. Electroabsorption modulators are intensity modulators based on absorption in a semiconductor. Optically controlled electroabsorption modulators for. Apr 18, 2011 ultraviolet electroabsorption modulators based on bulk gan films and on ganalgan multiple quantum wells were developed and characterized. We report waveguide integrated ge electroabsorption modulators operating at 1615nm wavelength with 3db bandwidth beyond 50ghz and a capacitance of 10ff. Errorfree operation for all channels is obtained with an average power penalty of i db. Eams naturally lend themselves to remote assemblies and large array antennae systems due to their size and weight. Pdf electroabsorption modulator with an asymmetric coupled. The heinp defectinducedintermixing technique has been applied to the fabrication of an integrated electroabsorption modulator and a distributed feedback laser.
Change optical path length with applied electric field. While in ea modulator, we apply electric field reverse bias to change the absorption spectrum. The main benefit of this intermixing technique is that, unlike dielectricenhanced intermixing, it is possible to regrow over material that has been intermixed by the heinp defect. The most uptodate book available on the physics of photonic devices this new edition of physics of photonic devices incorporates significant advancements in the field of photonics that have occurred since publication of the first. High speed electroabsorption modulator in the generic photonic integration platform m. Ge electroabsorption modulators and sige technology for. Electroabsorption modulators used for alloptical signal. Electroabsorption modulators used for alloptical signal processing and labelling. Electroabsorption modulators are semiconductor elec trooptic devices in which a change in absorption coef. An electroabsorption modulator or electroabsorption modulator is a semiconductor device which can be used for controlling modulating the intensity of a laser beam via an electric voltage intensity modulators. Electroabsorption modulator performance predicted from band. Large and small single modulators and modulator arrays have been fabricated on a wafer scale with an optimized device fabrication technology.
Zalerts allow you to be notified by email about the availability of new books according to your search query. The work has yielded detectors and modulators that demonstrate top performance for transmission and reception entirely through graphene devices, reaching worldrecord data rates for graphene devices 50 gbs for an electroabsorption modulator on soi. Optical signal processing using electroabsorption modulators. The photocurrent lowers the equivalent junction resistance to less than 30. Electroabsorption modulator nmechanisms franzkeldysh effect nobserved in conventional bulk semiconductors quantumconfined stark effect qcse nquantum well structures nboth of these electroabsorption effects are. Highpower operation of electroabsorption modulators. The quantumconfined stark effect qcse is an established optical modulation mechanism, yet topperforming modulators harnessing it rely. Low driving voltage band llingbased iiivonsilicon electroabsorption modulator qiangsheng huang,1,2 yingchen wu,2,3 keqi ma,1 jianhao zhang,1 weiqiang xie,2 xin fu,1,2 yaocheng shi,1 kaixuan chen,4 jianjun he,3 dries van thourhout,2 gunther roelkens,2 liu liu,4, a and sailing he1,4, b 1centre for optical and electromagnetic research, zhejiang provincial key laboratory for sensing. Electroabsorption modulators based on bulk gan films and gan. In both types of devices, the absorption edge at room temperature is dominated by excitonic effects and can be strongly modified through the application of an external electric field.
A low power 2x28 gb s electroabsorption modulator driver. Pdf electroabsorption modulators based on bulk gan films. To meet this requirement, unlicensed millimeter wave mmwave band has been. Publishers pdf, also known as version of record includes final page, issue. Moustakasa department of electrical and computer engineering and photonics center, boston university, 8 saint marys street, boston, massachusetts 02215, usa. Its principle of operation is based on the franzkeldysh effect, i.
Moreover, it favorably compares with the to date highest performance links employing lithium niobate crosscoupled machzehnder modulators, proving itself an enabling technology for placement of allsemiconductor radiofrequency lightwave transmitters in high. Analysis of multiquantum well electroabsorption modulators joachim piprek, yijenchiu, and john e. A terminating impedance circuit, which is thermally decoupled from a substrate, for an electroabsorption modulator, having a modulator capacitance includes a series resistanceemphasized rf delay line exhibiting an impedance distributed over its length, wherein the spatially distributed impedance has at least a predominant resistance per unit length, an inductance per unit length tuned to the. Coldren b a apogee photonics, 6580 snow drift road, suit 100, allentown, pa. Opticallyswitched dualdiode electroabsorption modulator. We report a novel hybrid integrated optic device consisting of algainasinp electroabsorption modulators and a fourarm silicaonsilicon planar lightwave circuit optical interferometer. Simulation of traveling wave electroabsorption modulators for. In this chapter we discuss the working principles, waveguide coupling, and the latest progress in ge and gesi electroabsorption modulators eams based on franzkeldysh effect fke and quantum. There are several types of optical modulators, but we will make a major discuss in electroabsorption modulator typed waveguide. Ge electroabsorption modulators and sige technology for optical interconnects ge electroabsorption modulators and sige technology for optical interconnects kuo, yuhsuan 20070208 00. The balanced electroabsorption modulated link as shown in fig. Electroabsorption modulators based on bulk gan films and. We compare electroabsorption modulators eams with multiple quantum wells mqws based on ingaaspinp and ingaalasinalas material systems. An introduction to electroabsorption modulators is given and several mechanisms that form the basis of electroabsorption are briefly discussed including franzkeldysh effect, quantumconfined stark effect qcse.
Application of electroabsorption modulators for highspeed. Osa a hybrid electroabsorption modulator device for. Bowers electrical engineering department, university of california, santa barbara, ca 93106 abstract electroabsorption modulators eams based on the quantum con. Rp photonics encyclopedia electroabsorption modulators.
The electroabsorption effect is the fundamental basis of electroabsorption modulators, eams, which are extensively used for high speed digital encoding of light. We also fabricated the graphene modulator on silicon platform, and the device achieved a modulation bandwidth at 12 ghz. Ea modulator electroabsorption modulators ee232 spring. Ultraviolet electroabsorption modulators based on bulk gan films and on ganalgan multiple quantum wells were developed and characterized. Waveguidebased electroabsorption modulator performance. Rf photonic technology in optical fiber links edited by. In both types of devices, the absorption edge at room.
A simple example is an overhead projector transparency. However, electromodulators have not kept up with the miniaturization of other electronic and optical components. A search query can be a title of the book, a name of the author, isbn or anything else. Waveguide eams are increasingly being used in optical networks since they can be monolithically integrated with continuouswave cw edgeemitting laser diodes to create lowcost. Kth, school of information and communication technology ict. The quantumconfined stark effect in layered hybrid. Abstractthe chirp factor of optical modulators is an important parameter that relates how the induced phase varies with the instantaneous power of a generated optical pulse, from which the dynamic chirp can be obtained. Jun 17, 2005 to achieve ultrahigh bit rate signal beyond existing etdm technology optical time division multiplexing otdm is been used. In laser diodes, we inject large enough current to achieve stimulated emission. Doublelayer graphene on photonic crystal waveguide.
Photonic generation of millimeterwaves using two cascaded electroabsorption modulators in radiooverfiber systems liwen wu the development of wireless communication services requires broader access bandwidth. They are therefore good candidates for efficient parallel signal processing architectures. Monolithic integration of an electroabsorption modulator into a gaasbased duocavity vcsel for resonancefree modulation j. However, carriers are generated due to absorption of.
Gesige asymmetric fabryperot quantum well electroabsorption. Highspeed carrierdepletion silicon machzehnder optical. Selectivelyundercut travelingwave electroabsorption. Verticalcavity multiple quantum well electroabsorption modulators eam offer gigahertz modulation speeds, insensitivity to light polarisation and can be integrated into large arrays. In ddoofdm, the optical carrier is sent along with the ofdm signal so that a. Alternatively, you can download the file locally and open with any standalone pdf.
In such emls, light modulation in the eam section is achieved by controlling the optical absorption coe. To show the validity of the theory, qcse of gesige qw is investigated and very good agreement between theory and reported measured results is obtained. Eams can be integrated with other devices like laser diodes. Signal modulation in optoelectronics is obtained by modulation of either the refractive index or the absorbance by an electric field. Recent breakthroughs in carrier depletion based silicon. Dissertation on electrical and computer engineering, october 20 2 coherent optical ofdm coofdm. The con troller maximised the 25 and 4oghz power levels. Comparison of quantum wells based on ingaaspinp and. Electroabsorption modulator performance predicted from bandedge absorption spectra of bulk, quantumwell, and quantumwellintermixed ingaasp structures gordon b. Electroabsorption modulators eams are typically electrically driven to vary the electric field across the device and hence the optical transmission through it 1. Here we show a strong transverse electroabsorption signal in a monolayer of the 2d semiconductor mos2.
Balanced electroabsorption modulator for highlinearity. Bowers electrical engineering department, university of california, santa barbara, ca 93106 abstract electroabsorption modulators eams based on the quantum confined stark effect have advantages in appli. Laser diodes integrated with electroabsorption modulators for 40gbs data transmission u n i v e r s i t a t u l m s c i e n d o d o c e n d o c u r a n d o ph. High power handling capability and low insertion loss are desirable for eam to achieve high link gain, low noise figure nf, and high. One of such enabling devices is quantumwell electroabsorption modulators eam that are appealing in terms of structural simplicity and low noise and are potentially advantageous on highspeed operation and low power consumption.
Developments here have advanced our physical understanding of bloch oscillation and wannierstark superlattices that were predicted several decades ago but now have become an experimental reality. Subwavelength modulators play an indispensable role in integrated photonicelectronic circuits. Reliable information about the coronavirus covid19 is available from the world health organization current situation, international travel. The studies carried out on the electroabsorption modulator as part of the project have been so far. Electroabsorption is a powerful technique which directly probes into carbon nanotube excitonic states, and may become a useful tool for in situ study of excitons in future nanotubebased photonic devices such as electroabsorption modulators. The performance of the device which has its pn junction positioned in the center of the waveguide is then compared to. Results on ultrafast modulator dynamics as well as demonstrations and investigations of wavelength conversion and regeneration are presented. Multiple quantum well electroabsorption modulators for rf photonic links pp 165202. Usually when the phrase slm is used, it means that the transparency can be controlled by a computer. These new functions call for innovative, low cost and high performance optoelectronic devices.
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